Ndedzipi nzira dzekugadzirira dzesilicon carbide poda?

Silicon carbide (SiC) ceramic podaine zvakanakira kusimba kwekushisa kwepamusoro, kupikisa kwakanaka kwe oxidation, kukwirira kupfeka kusagadzikana uye kugadzikana kwekupisa, kudiki kwekuwedzera kwemafuta ekuwedzera, kukwirira kwekushisa kwekushisa, kugadzikana kwakanaka kwemakemikari, etc. Naizvozvo, inowanzoshandiswa mukugadzira makamuri ekupisa, kupisa kwekushisa kwepamusoro. zvishandiso, zvigamba zvinodzivirira tembiricha, zvikamu zveinjini yendege, makemikari anoita midziyo, machubhu ekupisa uye zvimwe zvinhu zvemakanika pasi pemamiriro ezvinhu akaomarara, uye inoshandiswa zvakanyanya einjiniya zvinhu.Haingoite basa rakakosha muminda yepamusoro-soro iri kugadzirwa (senge injini dzeceramic, spacecraft, nezvimwewo), asi inewo musika wakakura uye minda yekushandisa inofanirwa kuvandudzwa musimba razvino, simbi, michina, zvekuvaka. , indasitiri yemakemikari nemamwe minda.

Nzira dzekugadzirira dzesilicon carbide podainogona kukamurwa zvakanyanya muzvikamu zvitatu: yakasimba chikamu nzira, yemvura chikamu nzira uye gasi chikamu nzira.

1. Solid chikamu nzira

Iyo yakasimba chikamu nzira inonyanya kusanganisira carbothermal kuderedza nzira uye silicon kabhoni yakananga maitiro maitiro.Carbothermal kuderedza nzira dzinosanganisira Acheson nzira, vertical choto nzira uye yakakwirira tembiricha inoshandura nzira.Silicon carbide powderkugadzirira kwakatanga kugadzirirwa neAcheson nzira, uchishandisa coke kuderedza silicon dioxide pakushisa kwepamusoro (inenge 2400 ℃), asi hupfu hunowanikwa nenzira iyi hune hukuru hukuru (> 1mm), hunopedza simba rakawanda, uye maitiro acho yakaoma.Mumakore ekuma1980, midziyo mitsva yekugadzira β-SiC hupfu, yakadai sechoto chakatwasuka uye tembiricha inoshandura, yakaonekwa.Sezvo iyo inoshanda uye yakakosha polymerization pakati pemicrowave uye makemikari zvinhu mune yakasimba yakajekeswa zvishoma nezvishoma, tekinoroji yekugadzira sic poda nekudziya kwemicrowave yave kuwedzera kukura.Iyo silicon kabhoni yakananga reaction nzira inosanganisirawo yekuzviparira yakakwira tembiricha synthesis (SHS) uye mechanic alloying nzira.SHS kuderedza synthesis nzira inoshandisa exothermic reaction pakati peSiO2 neMg kugadzirisa kushomeka kwekupisa.Thesilicon carbide podayakawanikwa neiyi nzira ine kuchena kwepamusoro uye diki diki saizi, asi iyo Mg muchigadzirwa inoda kubviswa neanotevera maitiro senge pickling.

2 liquid phase nzira

Iyo yemvura chikamu nzira inonyanya kusanganisira sol-gel nzira uye polymer yekupisa yekuora nzira.Sol-gel nzira inzira yekugadzira gel ine Si uye C neyakafanira sol-gel process, uye ipapo pyrolysis uye yakanyanya tembiricha carbothermal kuderedza kuwana silicon carbide.Kuora kwekushisa kwepamusoro kwe organic polymer inyanzvi yekugadzira silicon carbide: imwe ndeyekupisa gel polysiloxane, decomposition reaction kusunungura zviduku zviduku, uye pakupedzisira kuumba SiO2 neC, uyezve nekabhoni kuderedza kugadzirisa kubudisa SiC powder;Imwe yacho ndeyekupisa polysilane kana polycarbosilane kuburitsa mamonomers madiki kuita skeleton, uye pakupedzisira kuumba.silicon carbide poda.

3 Gasi chikamu nzira

Parizvino, gasi chikamu synthesis yesilicon carbideceramic ultrafine poda inonyanya kushandisa gas phase deposition (CVD), Plasma Induced CVD, Laser Induced CVD uye mamwe matekinoroji ekuora organic zvinhu pakupisa kwakanyanya.Iyo yakawanikwa poda ine zvakanakira kuchena kwepamusoro, diki diki saizi, mashoma particle agglomeration uye nyore kutonga kwezvikamu.Iyo inzira yakasimukira pari zvino, asi nemutengo wakakwira uye goho rakaderera, haisi nyore kuwana kugadzirwa kwakawanda, uye inonyanya kukodzera kugadzira zvinhu zverabhoritari uye zvigadzirwa zvine zvakakosha zvinodiwa.

Parizvino, thesilicon carbide podarinoshandiswa rinonyanya submicron kana kunyange nano level poda, nekuti hupfu hushoma saizi idiki, yakakwira pamusoro pekuita basa, saka dambudziko guru nderekuti hupfu huri nyore kugadzira agglomeration, zvinodikanwa kugadzirisa pamusoro pehupfu kudzivirira kana kurambidza. iyo yechipiri agglomeration yehupfu.Parizvino, nzira dzekupararira kweSiC poda dzinonyanya kusanganisira zvinotevera: high-energy surface modification, kugeza, dispersant treatment yehupfu, inorganic coating modification, organic coating modification.


Nguva yekutumira: Aug-08-2023